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Hai Dang Trinh
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- 🏛️Affiliation: Hanoi University of Industry
- 🔬Field: Physics
- ✍️Profile incomplete — add information
An h-index of 7 places this researcher in Physics, within the top 25% of 1,880 profiles in this field in our directory.
Featured publications
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor105 citations
Applied Physics Letters · 2010 · DOI
Applied Physics Letters · 2010 · DOI
Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage43 citations
Electronics Letters · 2010 · DOI
Electronics Letters · 2010 · DOI
Electrical Characteristics of n, p-In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer39 citations
IEEE Transactions on Electron Devices · 2014 · DOI
IEEE Transactions on Electron Devices · 2014 · DOI
Electrical Characterization of $\hbox{Al}_{2} \hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments29 citations
IEEE Electron Device Letters · 2011 · DOI
IEEE Electron Device Letters · 2011 · DOI
Band Alignment Parameters of Al<sub>2</sub>O<sub>3</sub>/InSb Metal–Oxide–Semiconductor Structure and Their Modification with Oxide Deposition Temperatures20 citations
Applied Physics Express · 2013 · DOI
Applied Physics Express · 2013 · DOI
Electrical Characterization and Materials Stability Analysis of ${\rm La}_{2}{\rm O}_{3}/{\rm HfO}_{2}$ Composite Oxides on n-${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ MOS Capacitors With Different Annealing Temperatures16 citations
IEEE Electron Device Letters · 2013 · DOI
IEEE Electron Device Letters · 2013 · DOI
Electrical Characteristics of ${\rm Al}_{2}{\rm O}_{3}/{\rm InSb}$ MOSCAPs and the Effect of Postdeposition Annealing Temperatures13 citations
IEEE Transactions on Electron Devices · 2013 · DOI
IEEE Transactions on Electron Devices · 2013 · DOI
In0.5Ga0.5As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition6 citations
IEEE Transactions on Electron Devices · 2012 · DOI
IEEE Transactions on Electron Devices · 2012 · DOI
The growth and fabrication of high-performance In<inf>0.5</inf>Ga<inf>0.5</inf>As metal-oxide-semiconductor capacitor on GaAs substrate by metalorganic chemical vapor deposition method5 citations
· 2012 · DOI
· 2012 · DOI
C–V characteristics of epitaxial germanium metal–oxide–semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric4 citations
Microelectronic Engineering · 2012 · DOI
Microelectronic Engineering · 2012 · DOI
About the field of Physics
Common research topics in this field:
Graphene research and applicationsQuantum Dots Synthesis And Properties2D Materials and ApplicationsPhotonic and Optical DevicesOptical Network TechnologiesChalcogenide Semiconductor Thin Films
Institutions with the most researchers in this field:
Vietnam National University Ho Chi Minh City · 181
Vietnam Academy of Science and Technology · 136
Hanoi University of Science and Technology · 109
Vietnam National University, Hanoi · 73
Phenikaa University · 60
These figures count profiles currently in this directory, not nationwide statistics.
Same institution — Hanoi University of Industry
Same field Physics
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