COMPILEDopen profilenot managed by this scholar
M
Mai Phi Hung
Researcher Profile 6/10Link copied
Information
- 🏛️Affiliation: Ton Duc Thang University
- 🔬Field: Physics
- 🆔ORCID: 0000-0002-1063-8943
- ✍️Profile incomplete — add information
An h-index of 10 places this researcher in Physics, within the top 25% of 1,880 profiles in this field in our directory.
Featured publications
Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor106 citations
IEEE Transactions on Electron Devices · 2014 · DOI
IEEE Transactions on Electron Devices · 2014 · DOI
Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor53 citations
ECS Solid State Letters · 2014 · DOI
ECS Solid State Letters · 2014 · DOI
Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress45 citations
Applied Physics Express · 2014 · DOI
Applied Physics Express · 2014 · DOI
Off-current reduction in p-type SnO thin film transistors45 citations
Applied Physics Letters · 2018 · DOI
Applied Physics Letters · 2018 · DOI
Suppression of Degradation Induced by Negative Gate Bias and Illumination Stress in Amorphous InGaZnO Thin-Film Transistors by Applying Negative Drain Bias26 citations
ACS Applied Materials & Interfaces · 2014 · DOI
ACS Applied Materials & Interfaces · 2014 · DOI
Correction to “Quantitative Analysis of the Effect of Hydrogen Diffusion From Silicon Oxide Etch-Stopper Layer Into Amorphous In–Ga–Zn–O on Thin-Film Transistor” [Nov 14 3762-3767]24 citations
IEEE Transactions on Electron Devices · 2014 · DOI
IEEE Transactions on Electron Devices · 2014 · DOI
Quantitative Analysis of Hole-Trapping and Defect-Creation in InGaZnO Thin-Film Transistor under Negative-Bias and Illumination-Stress22 citations
ECS Journal of Solid State Science and Technology · 2014 · DOI
ECS Journal of Solid State Science and Technology · 2014 · DOI
Effect of High Oxygen Partial Pressure on Carrier Transport Mechanism in a-InGaZnO TFTs14 citations
IEEE Transactions on Electron Devices · 2018 · DOI
IEEE Transactions on Electron Devices · 2018 · DOI
Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors12 citations
ECS Journal of Solid State Science and Technology · 2016 · DOI
ECS Journal of Solid State Science and Technology · 2016 · DOI
Investigating Effect of Postannealing Time on Positive Bias Stress Stability of In–Ga–Zn–O TFT by Conductance Method10 citations
IEEE Transactions on Electron Devices · 2015 · DOI
IEEE Transactions on Electron Devices · 2015 · DOI
About the field of Physics
Common research topics in this field:
Graphene research and applicationsQuantum Dots Synthesis And Properties2D Materials and ApplicationsPhotonic and Optical DevicesOptical Network TechnologiesChalcogenide Semiconductor Thin Films
Institutions with the most researchers in this field:
Vietnam National University Ho Chi Minh City · 181
Vietnam Academy of Science and Technology · 136
Hanoi University of Science and Technology · 109
Vietnam National University, Hanoi · 73
Phenikaa University · 60
These figures count profiles currently in this directory, not nationwide statistics.
Same institution — Ton Duc Thang University
Same field Physics
The publication list above is compiled from the open academic database OpenAlex (CC0 licence). Compare with the source record on OpenAlex ↗
Suggest / Claim this profile
Mai Phi HungTon Duc Thang University
Claim
Original profile stored athocthuat.vn— two pages display the same database, verification syncs everywhere.